Neelakandan M Santhosh is a research associate at the Department of Gaseous Electronics, JSI. At F6, he is leading research on graphene and other 2D materials. He is a member of the Dielectric Science and Technology Division, the Electrochemical Society, and several advisory committees of scientific journals.
His main research interest is developing novel materials, including graphene, quantum dots, and other 2D materials, and exploring their novel quantum features by tuning them with plasma-enabled techniques. The major objective of his research is to modulate the electrical properties of the materials and activate the quantum capacitance, which could be potential for future electronic and energy devices. Various surface and structural analysis techniques will be used during his research, such as scanning and transmission electron microscopes, X-ray and Raman-based spectroscopies and synchrotron analysis.